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ELECTRICAL CHARACTERISTICs @25℃ (unless otherwise noted)
SYMBOL	CHARACTERISTIC	3N163		3N164		UNITS	CONDITIONS
	Gate Leakage Current	MIN	MAX	MIN	MAX	pA	VGs=-40V,Vos=0(3N163),Vso=0V
Gss	Gate Leakage Current		-10		-10		VGs=-40V,Vos=0(3N163),Vso=0V
	TA=+125℃		25		-25		Vgs=-30V,Vos=0(3N164),Vsa=0V
BVpss	Drain-Source Breakdown Voltage	40		30			lo=-10μA Vgs=0,Vas=0
BVsps	Souce-Drain Breakdown Voltage	40		30		V	ls=-10μA Vgo=0,Vep=0
VGsm	Threshold Voitage	-2.0	-5.0	-2.0	-5.0		Vos=VGs lo=-10μA,Vss=0V
VGs	Gate Source Voltage (on)	-3.0	-6.5	-3.0	-6.5		Vos=-15V lo=-0.5mA,Vsa=0V
loss	Zero Gate Voltage,Drain Current (off)		-200		-400	pA	Vos=-15V Vgs=0,Vsa=0V
lsDs	Zero Gate Voltage,Source Current		-400		800	pA	Vso=-15V Vgs=0,VoB=0V
Rpsion	Drain-Source on Resistance		250		300	ohms	Vgs=-20V lo=-100μA,Vsg=0V
lptom	On Drain Current	-5.0	30	-3.0	30	mA	Vos=-15V VGs=-10V,Vse=0V
gis	ForwardTransconductance	2.0	4.0	1.0	4.0	mS	Vos=-15V lo=-10mA f=1kHz
9og	Output Admittance		250		250	μS	Vos=-15V lo=-10mA f=1kHz
Cs	Input Capacitance-Output Shorted		3.5		3.5	pF	Vos=-15V lo=-10mA1f=1MHz
Css	Reverse Transfer Capacitance		0.7		0.7
Coss	Output Capacitance Input Shorted		3.0		3.0

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